Room temperature operation of electrically tunable quantum cascade lasers

Author

Muller, A. ; Beck, M. ; Faist, J. ; Oesterle, U. ; Ilegems, M.

Author_Institution

Neuchatel Univ., Switzerland

fYear

1992

fDate

23-28 May 1992

Firstpage

1

Lastpage

2

Abstract

Summary form only given. There is a strong interest in the use of quantum cascade lasers based on intersubband transitions operating at room temperature in the mid-infrared for sensing applications. Our electrically tunable quantum cascade laser uses a design based on a three well active region. It is grown by molecular beam epitaxy using InGaAs and AlInAs alloys lattice matched on an InP substrate.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; laser transitions; laser tuning; molecular beam epitaxial growth; optical fabrication; optical sensors; quantum well lasers; semiconductor growth; AlInAs; InGaAs; InP; InP substrate; electrically tunable quantum cascade laser; electrically tunable quantum cascade lasers; intersubband transitions; lattice matched; mid-infrared sensing applications; molecular beam epitaxy; quantum cascade lasers; room temperature; room temperature operation; three well active region; Gallium arsenide; Laser transitions; Optical design; Optical materials; Optical waveguides; Photonic band gap; Quantum cascade lasers; Semiconductor materials; Temperature; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807076

Filename

807076