Title :
Vapor transport deposition of cadmium telluride films
Author :
McCandless, Brian E. ; Birkmire, Robert W. ; Buchanan, W.A.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
Polycrystalline CdTe thin films are grown by vapor transport deposition onto moving substrates using a linear cross-web source for operation at low vacuum and high growth temperature. The source design, based on delivery of a carrier gas saturated with Cd and Te2 vapors, overcomes the limitations of other vapor deposition methods. Models for vapor transport deposition and radiative transfer within the source facilitate a quantitative understanding of source behavior leading to control of film deposition. The deposition has been characterized over a wide range of operating parameters. Dense, single phase device quality CdTe films have been fabricated. Deposition of other compound semiconductor materials has also been demonstrated.
Keywords :
II-VI semiconductors; cadmium compounds; radiative transfer; semiconductor growth; semiconductor thin films; solar cells; vacuum deposition; Cd; Cd vapor saturated carrier gas; CdTe; Te2; Te2 vapor saturated carrier gas; cadmium telluride films; dense single phase device quality CdTe films; film deposition control; high growth temperature; linear cross-web source; low vacuum; moving substrates; operating parameters; photovoltaic modules; polycrystalline CdTe thin films; radiative transfer; source design; vapor transport deposition; Cadmium compounds; Cascading style sheets; Chemical vapor deposition; Elementary particle vacuum; Energy conversion; Semiconductor films; Semiconductor materials; Sputtering; Substrates; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190623