Type-II Ge/Si quantum dot superlattice for intermediate-band solar cell applications

Author

Weiguo Hu ; Fauzi, Mohd Erman ; Igarashi, M. ; Higo, Akio ; Ming-Yi Lee ; Yiming Li ; Usami, Noritaka ; Samukawa, Seiji

Author_Institution

Inst. of Fluid Sci., Tohoku Univ., Sendai, Japan

fYear

2013

fDate

16-21 June 2013

Firstpage

1021

Lastpage

1023

Abstract

A Ge/Si type-II quantum dot (QD) has been developed for use in all-Si intermediate-band solar cell (IBSC) applications. A top-down process is used to fabricate the ultra-high-quality QD superlattice. A newly developed 3D finite element method was used to solve several key design problems in achieving a practical structure. Theoretical calculations revealed that a heavy hole state can act as an ideal intermediate band when the interdot space ranges from 0.5 to 4 nm. An IBSC based on this superlattice dramatically enhanced conversion efficiency for concentration applications. For one-sun applications, H-passivizing Si and/or regrowthing amorphous SiC have a great potential to improve the conversion efficiency.

Keywords

amorphous semiconductors; finite element analysis; germanium; quantum dots; semiconductor superlattices; silicon; solar cells; 3D finite element method; Ge-Si; IBSC; intermediate-band solar cell applications; quantum dot superlattice; ultra-high-quality QD superlattice; Finite element analysis; Nanotechnology; Photovoltaic cells; Quantum dots; Silicon; Superlattices; amorphous materials; photovoltaic cells; quantum dot; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744314

Filename

6744314