Title :
Modeling of single junction anisotype dilute nitride multi quantum well solar cell for improvement in efficiency
Author :
Vijaya, Gopi ; Freundlich, Alex
Author_Institution :
Univ. of Houston, Houston, TX, USA
Abstract :
III-V Dilute Nitride solar cells have recently shown great promise for achieving high efficiency, and the inclusion of multi-quantum wells in a p-i-n system has previously been explored as a viable option. In this work, multi-quantum wells of different elemental compositions (AlAsN, GaAsN, GaSbN) with an anisotype AlGaAs(p)/ GaAs(i)MQW/GaAs(n) provides an increase of extraction below the band-gap, while retaining the immunity to short diffusion lengths. Determination of the compositions and QW structure was followed by optimization in the 5 parameter space of the emitter-base thicknesses and the number of QW´s of the three dilute nitrides. The results estimate an increase in overall efficiency to 32.5% of a single junction cell under AM0 1 sun concentration.
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; quantum well devices; solar cells; wide band gap semiconductors; AlGaAs-GaAs-GaAs-AlAsN; AlGaAs-GaAs-GaAs-GaAsN; AlGaAs-GaAs-GaAs-GaSbN; III-V dilute nitride solar cell; QW structure; band-gap; different elemental composition; emitter-base thicknesses; junction cell; multiquantum wells inclusion; p-i-n system; single junction anisotype dilute nitride multiquantum well solar cell; Absorption; Gallium arsenide; Junctions; Photonic band gap; Photovoltaic cells; Quantum well devices; Radiative recombination; anisotype; dilute nitride; quantum well; solar cell;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744330