Coherent light from E-field induced quantum coupling of exciton states in superlattice-like quantum wells

Author

Lyssenko, V.G. ; Erland, J. ; Hvam, J.M. ; Loser, F. ; Leo, K. ; Kohler, K.

Author_Institution

Mikroelektronik Centret, Tech. Univ. Lyngby, Denmark

fYear

1992

fDate

23-28 May 1992

Firstpage

12

Lastpage

13

Abstract

Summary form only given. We focus on the ability to control the electronic coupling in coupled quantum wells with external E-fields leading to a strong modification of the coherent light emission, in particular at a bias where a superlattice-like miniband is formed. More specifically, we investigate a MBE-grown GaAs sample with a sequence of 15 single quantum wells having a successive increase of 1 monolayer in width ranging from 62 A to 102 A and with AlGaAs barriers of 17 /spl Aring/.

Keywords

III-V semiconductors; electro-optical effects; gallium arsenide; molecular beam epitaxial growth; monolayers; multiwave mixing; semiconductor growth; semiconductor quantum wells; 17 A; 62 to 102 A; AlGaAs; AlGaAs barriers; E-field induced quantum coupling; GaAs; MBE-grown GaAs sample; coherent light; coherent light emission; coupled quantum wells; exciton states; external E-fields; monolayer; single quantum wells; superlattice-like miniband; superlattice-like quantum wells; Density measurement; Electric variables measurement; Electrons; Excitons; Gallium arsenide; Optical coupling; Optical superlattices; Quantum dot lasers; Quantum dots; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807096

Filename

807096