DocumentCode
3343503
Title
Co-sputtered Cd2SnO4 films as front contacts for CdTe solar cells
Author
Mamazza, R. ; Yu, S. ; Morel, D.L. ; Ferekides, C.S.
Author_Institution
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
fYear
2002
fDate
19-24 May 2002
Firstpage
612
Lastpage
615
Abstract
Cd2SnO4 thin films were investigated from a materials point of view as well as from an application point of view through their incorporation into CdTe based solar cells. Cd2SnO4 was deposited by co-sputtering from CdO and SnO2 targets. The lowest resistivity achieved was 2.01×10-4 Ω-cm with a mobility of 29.2 cm2/V/s and a carrier concentration of 8.47 × 1020 cm-3. For this same sample the average transmission was over 90% over the visible and near IR spectrum (400-900nm). When Cd2SnO4 were used as part of the front contact in thin film CdTe solar cells Voc´s over 840 mV, Jsc´s over 23 mA/cm2, and ff´s over 68.0% were obtained with the best to-date efficiency being 14.0%.
Keywords
II-VI semiconductors; cadmium compounds; electrical resistivity; semiconductor device measurement; solar cells; sputtered coatings; 14.0 percent; 2.01×10-4 ohmcm; 400 to 900 nm; 840 mV; Cd2SnO4; CdTe; CdTe solar cells; Co-sputtered Cd2SnO4 films; IR transmission; front contacts; resistivity; visible transmission; Annealing; Chemical vapor deposition; Conducting materials; Conductive films; Crystalline materials; Crystallization; Grain size; Photovoltaic cells; Sputtering; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN
1060-8371
Print_ISBN
0-7803-7471-1
Type
conf
DOI
10.1109/PVSC.2002.1190639
Filename
1190639
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