Laser-induced Rabi oscillations in semiconductors

Author

Schulzgen, Axel ; Binder, Rolf ; Donovan, M.E. ; Lindberg, M. ; Wundke, K. ; Gibbs, H.M. ; Khitrova, G. ; Peyghambarian, N.

Author_Institution

Opt. Sci. Center, Arizona Univ., Tucson, AZ, USA

fYear

1992

fDate

23-28 May 1992

Firstpage

13

Lastpage

14

Abstract

Summary form only given. We apply a two-color pump-probe scheme that enables the observation of several cycles of clearly resolved excitonic Rabi oscillations in a semiconductor quantum well. A 770 fs circularly polarized pump pulse with a narrow spectrum excites resonantly heavy hole (hh) excitons. The linear transmission spectrum of the InGaAs-GaAs sample and the pulse spectra are shown.

Keywords

III-V semiconductors; colour; excitons; gallium arsenide; high-speed optical techniques; indium compounds; laser beam effects; optical pumping; semiconductor quantum wells; 770 fs; InGaAs-GaAs; clearly resolved excitonic Rabi oscillations; fs circularly polarized pump pulse; laser-induced Rabi oscillations; linear transmission spectrum; narrow spectrum; pulse spectra; resonantly heavy hole excitons; semiconductor quantum well; semiconductors; two-color pump-probe scheme; Absorption; Atom optics; Gallium arsenide; Optical microscopy; Optical polarization; Optical pulses; Optical pumping; Pump lasers; Resonance; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807098

Filename

807098