• DocumentCode
    3343538
  • Title

    Material properties of Cd1−xMgxO transparent conductors

  • Author

    Guibin Chen ; Yu, K.M. ; Reichertz, L.A. ; Walukiewicz, W.

  • Author_Institution
    Mater. Sci. Div., Lawrence Berkeley Nat. Lab., Berkeley, CA, USA
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Firstpage
    1105
  • Lastpage
    1109
  • Abstract
    We have studied structural, electrical and optical properties of ternary Cd1-xMgxO alloy thin films synthesized by radio frequency magnetron sputtering method with Mg content as high as x=0.44. We found that only a fraction (50-60%) of Mg is incorporated as substitutional Mg contributing to the modification of the electronic structure of the alloy. The electrical and optical results of the Cd1-xMgxO alloys are analyzed in terms of a large upward shift of the conduction band edge with increasing Mg content. The rapid increase of the optical band gap offers a potential of using Cd-rich CdMgO alloys as transparent conductors for photovoltaics.
  • Keywords
    II-VI semiconductors; cadmium compounds; conduction bands; magnesium compounds; metallic thin films; optical constants; semiconductor growth; sputter deposition; transparency; wide band gap semiconductors; Cd1-xMgxO; conduction band edge; electrical properties; electronic structure; material properties; optical band gap; optical properties; photovoltaics; radio frequency magnetron sputtering method; structural properties; ternary alloy thin film synthesis; transparent conductors; Absorption; Conductors; Metals; Optical films; Photonic band gap; oxide semiconductors; photovoltaics; sputtering; transparent conductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.2013.6744334
  • Filename
    6744334