Title :
Study of a new indium sulphide derivative for buffer layer application
Author :
Barreau, N. ; Marsillac, S. ; Bernede, J.C. ; Deudon, C. ; Brohan, L. ; Shafarman, W.N. ; Barreau, A.
Author_Institution :
LPSE-FSTN, Nantes, France
Abstract :
Thin films of β-In2NaS3 (BINS) have been synthesized by physical vapour deposition (PVD). The determination of their properties has shown that the films have an n-type electrical conductivity around 10-6 S.cm-1 and their optical band gap increases from 2.10 eV to 2.95 eV. These properties make the wide band gap BINS thin films potential candidates to substitute CBD-CdS in thin films CIGS-based solar cells. The first CIGS/BINS cell has reached efficiency higher than 8%, with a Voc of 660 mV.
Keywords :
electrical conductivity; energy gap; indium compounds; optical constants; semiconductor thin films; sodium compounds; solar cells; vapour deposited coatings; wide band gap semiconductors; β-In2NaS3; 660 mV; 8 percent; CIGS/BINS cell; Cu(InGa)(SSe)2; In2NaS3; PVD; buffer layer application; n-type electrical conductivity; optical band gap; physical vapour deposition; solar cells; wide band gap BINS thin films; Atherosclerosis; Buffer layers; Chemical vapor deposition; Conductive films; Conductivity; Indium; Optical buffering; Optical films; Sputtering; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190643
