• DocumentCode
    3343576
  • Title

    Investigation of chemical-bath-deposited ZnS buffer layers for Cu(InGa)Se2 thin film solar cells

  • Author

    Sang, Baosheng ; Shafarman, William N. ; Birkmire, Robert W.

  • Author_Institution
    Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    632
  • Lastpage
    635
  • Abstract
    Chemical bath deposition of ZnS from solutions of ZnSO4, thiourea and ammonia was carried out. Structural and optical properties of the ZnS films were studied. Cu(InGa)Se2 solar cells fabricated with the ZnS buffer had higher quantum efficiency at short wavelengths but Voc, and FF were a little lower than those with CdS buffer. The best cell (total area: 0.47 cm2) with the ZnS buffer was 13.9% efficient (Voc: 618 mV, Jsc: 32.4 mA/cm2 FF: 0.693).
  • Keywords
    II-VI semiconductors; copper compounds; gallium compounds; indium compounds; infrared spectra; liquid phase deposited coatings; semiconductor device measurement; semiconductor thin films; solar cells; ternary semiconductors; ultraviolet spectra; visible spectra; zinc compounds; 13.9 percent; 618 mV; Cu(InGa)Se2; Cu(InGa)Se2 thin film solar cells; ZnS; chemical-bath-deposited ZnS buffer layers; optical properties; quantum efficiency; structure; thiourea; Buffer layers; Chemicals; Optical buffering; Optical films; Optical mixing; Photonic band gap; Photovoltaic cells; Temperature; Transistors; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190644
  • Filename
    1190644
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3343576