DocumentCode :
3343576
Title :
Investigation of chemical-bath-deposited ZnS buffer layers for Cu(InGa)Se2 thin film solar cells
Author :
Sang, Baosheng ; Shafarman, William N. ; Birkmire, Robert W.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
632
Lastpage :
635
Abstract :
Chemical bath deposition of ZnS from solutions of ZnSO4, thiourea and ammonia was carried out. Structural and optical properties of the ZnS films were studied. Cu(InGa)Se2 solar cells fabricated with the ZnS buffer had higher quantum efficiency at short wavelengths but Voc, and FF were a little lower than those with CdS buffer. The best cell (total area: 0.47 cm2) with the ZnS buffer was 13.9% efficient (Voc: 618 mV, Jsc: 32.4 mA/cm2 FF: 0.693).
Keywords :
II-VI semiconductors; copper compounds; gallium compounds; indium compounds; infrared spectra; liquid phase deposited coatings; semiconductor device measurement; semiconductor thin films; solar cells; ternary semiconductors; ultraviolet spectra; visible spectra; zinc compounds; 13.9 percent; 618 mV; Cu(InGa)Se2; Cu(InGa)Se2 thin film solar cells; ZnS; chemical-bath-deposited ZnS buffer layers; optical properties; quantum efficiency; structure; thiourea; Buffer layers; Chemicals; Optical buffering; Optical films; Optical mixing; Photonic band gap; Photovoltaic cells; Temperature; Transistors; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190644
Filename :
1190644
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3343576
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