Title :
Optical spectroscopy of single semiconductor quantum dots
Author :
Dekel, E. ; Gershoni, D. ; Ehrenfreund, E. ; Petroff, Pierre M.
Author_Institution :
Dept. of Phys., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
Summary form only given. Low temperature confocal optical microscopy is used to spectroscopically study emission from a single semiconductor quantum dot. The spectrally sharp transitions between discrete confined multiexcitonic states are quantitatively explained using a few interacting carrier Hamiltonian.
Keywords :
excitons; low-temperature techniques; optical focusing; optical microscopy; semiconductor quantum dots; spectroscopy; discrete confined multiexcitonic states; few interacting carrier Hamiltonian; low temperature confocal optical microscopy; optical spectroscopy; single semiconductor quantum dot; single semiconductor quantum dots; spectrally sharp transitions; Excitons; Gallium arsenide; Interference; Lattices; Quantum dots; Semiconductor superlattices; Shape control; Spectroscopy; US Department of Transportation; Zinc compounds;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
DOI :
10.1109/QELS.1999.807101
