Title :
CIGS devices with ZIS, In2S3, and CdS buffer layers
Author :
Delahoy, A.E. ; Akhtar, M. ; Cambridge, J. ; Chen, L. ; Govindarajan, R. ; Guo, S. ; Romero, M.J.
Author_Institution :
Energy Photovoltaics, Princeton, NJ, USA
Abstract :
The device performances of Cu(In,Ga)Se2 solar cells are compared as a function of various buffer layers applied by thermal evaporation that are considered as candidates to replace the conventional CdS buffer layer applied by chemical bath deposition. The buffer layers include ZnIn2Se4 (ZIS), In2Se3 and ZnSe. Devices with CdS and ZIS buffers are also studied by EBIC and cathodoluminescence.
Keywords :
EBIC; cadmium compounds; cathodoluminescence; copper compounds; gallium compounds; indium compounds; semiconductor device measurement; solar cells; ternary semiconductors; vacuum deposited coatings; zinc compounds; CIGS devices; Cu(InGa)Se2; EBIC; In2Se3; ZIS; ZnIn2Se4; ZnSe; buffer layers; cathodoluminescence; device performance; solar cells; thermal evaporation; Buffer layers; Chemicals; Conducting materials; Glass; Laboratories; Manufacturing processes; Photovoltaic cells; Renewable energy resources; Temperature; Zinc compounds;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190646
