DocumentCode :
3343632
Title :
Femtosecond inter- and intra-band spectroscopy of semiconductor quantum dots
Author :
Klimov, V.I. ; McBranch, D.W. ; Leatherdale, C.A. ; Bawendi, M.G.
Author_Institution :
Chem. Scis. & Technol., Los Alamos Nat. Lab., NM, USA
fYear :
1992
fDate :
23-28 May 1992
Firstpage :
16
Lastpage :
17
Abstract :
Summary form only given. Due to a large energy level spacing and an enhanced surface-to-volume ratio, carrier dynamics in strongly-confined semiconductor nanocrystals (NCs) are significantly different from those in bulk materials. The large level separation has been predicted to significantly inhibit energy relaxation due to a phonon bottleneck which, however, has been argued against by recent experiments. The relaxation of carriers from the lowest quantized states in NCs can be significantly faster than for radiative decay, which is due to enhancement of non-radiative processes associated, e.g., with surface trapping.
Keywords :
carrier mobility; carrier relaxation time; nanostructured materials; semiconductor quantum dots; time resolved spectroscopy; CdSe; carrier dynamics; carrier relaxation; energy relaxation; enhanced surface-to-volume ratio; fs inter-band spectroscopy; fs intra-band spectroscopy; large energy level spacing; lowest quantized state; non-radiative processes; phonon bottleneck; radiative decay; semiconductor quantum dots; strongly-confined semiconductor nanocrystals; surface trapping; Excitons; Laser excitation; Optical pulses; Optical scattering; Phonons; Photoluminescence; Quantum dots; Spectroscopy; US Department of Transportation; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
Type :
conf
DOI :
10.1109/QELS.1999.807104
Filename :
807104
Link To Document :
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