DocumentCode
3343632
Title
Femtosecond inter- and intra-band spectroscopy of semiconductor quantum dots
Author
Klimov, V.I. ; McBranch, D.W. ; Leatherdale, C.A. ; Bawendi, M.G.
Author_Institution
Chem. Scis. & Technol., Los Alamos Nat. Lab., NM, USA
fYear
1992
fDate
23-28 May 1992
Firstpage
16
Lastpage
17
Abstract
Summary form only given. Due to a large energy level spacing and an enhanced surface-to-volume ratio, carrier dynamics in strongly-confined semiconductor nanocrystals (NCs) are significantly different from those in bulk materials. The large level separation has been predicted to significantly inhibit energy relaxation due to a phonon bottleneck which, however, has been argued against by recent experiments. The relaxation of carriers from the lowest quantized states in NCs can be significantly faster than for radiative decay, which is due to enhancement of non-radiative processes associated, e.g., with surface trapping.
Keywords
carrier mobility; carrier relaxation time; nanostructured materials; semiconductor quantum dots; time resolved spectroscopy; CdSe; carrier dynamics; carrier relaxation; energy relaxation; enhanced surface-to-volume ratio; fs inter-band spectroscopy; fs intra-band spectroscopy; large energy level spacing; lowest quantized state; non-radiative processes; phonon bottleneck; radiative decay; semiconductor quantum dots; strongly-confined semiconductor nanocrystals; surface trapping; Excitons; Laser excitation; Optical pulses; Optical scattering; Phonons; Photoluminescence; Quantum dots; Spectroscopy; US Department of Transportation; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-576-X
Type
conf
DOI
10.1109/QELS.1999.807104
Filename
807104
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