• DocumentCode
    3343632
  • Title

    Femtosecond inter- and intra-band spectroscopy of semiconductor quantum dots

  • Author

    Klimov, V.I. ; McBranch, D.W. ; Leatherdale, C.A. ; Bawendi, M.G.

  • Author_Institution
    Chem. Scis. & Technol., Los Alamos Nat. Lab., NM, USA
  • fYear
    1992
  • fDate
    23-28 May 1992
  • Firstpage
    16
  • Lastpage
    17
  • Abstract
    Summary form only given. Due to a large energy level spacing and an enhanced surface-to-volume ratio, carrier dynamics in strongly-confined semiconductor nanocrystals (NCs) are significantly different from those in bulk materials. The large level separation has been predicted to significantly inhibit energy relaxation due to a phonon bottleneck which, however, has been argued against by recent experiments. The relaxation of carriers from the lowest quantized states in NCs can be significantly faster than for radiative decay, which is due to enhancement of non-radiative processes associated, e.g., with surface trapping.
  • Keywords
    carrier mobility; carrier relaxation time; nanostructured materials; semiconductor quantum dots; time resolved spectroscopy; CdSe; carrier dynamics; carrier relaxation; energy relaxation; enhanced surface-to-volume ratio; fs inter-band spectroscopy; fs intra-band spectroscopy; large energy level spacing; lowest quantized state; non-radiative processes; phonon bottleneck; radiative decay; semiconductor quantum dots; strongly-confined semiconductor nanocrystals; surface trapping; Excitons; Laser excitation; Optical pulses; Optical scattering; Phonons; Photoluminescence; Quantum dots; Spectroscopy; US Department of Transportation; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    1-55752-576-X
  • Type

    conf

  • DOI
    10.1109/QELS.1999.807104
  • Filename
    807104