DocumentCode
3343703
Title
Excitons, biexcitons, and dephasing in GaAs T-shaped quantum wires measured by four-wave mixing
Author
Langbein, W. ; Gislason, H. ; Hvam, J.M.
Author_Institution
Experimentelle Phys. EIIb, Dortmund Univ., Germany
fYear
1992
fDate
23-28 May 1992
Firstpage
19
Abstract
Summary form only given. We investigate the excitonic properties of a high-quality T-shaped wire (T-QWR) sample by four-wave mixing (FWM). It is a confinement optimized structure with 20 meV exciton confinement energy and only 3 meV in homogeneous width of the T-QWR exciton resonance. It consists of a 24 nm [001] AlGaAs multiple quantum well (QW) structure.
Keywords
III-V semiconductors; biexcitons; excitons; gallium arsenide; multiwave mixing; semiconductor quantum wires; 20 meV; 24 nm; 3 meV; AlGaAs multiple quantum well; GaAs; GaAs T-shaped quantum wires; T-QWR exciton resonance; biexcitons; confinement optimized structure; dephasing; excitonic properties; excitons; four-wave mixing; high-quality T-shaped wire; homogeneous width; meV exciton confinement energy; Delay; Energy measurement; Excitons; Four-wave mixing; Gallium arsenide; Optical pulse generation; Polarization; Resonance; Temperature; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-576-X
Type
conf
DOI
10.1109/QELS.1999.807108
Filename
807108
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