• DocumentCode
    3343822
  • Title

    Annealing effect of CdS thin films deposited by chemical bath deposition on different substrates

  • Author

    Robin, Yoann ; Moret, Matthieu ; Ruffenach, S. ; Aulombard, Roger-Louis ; Briot, O.

  • Author_Institution
    Lab. Charles Coulomb, Univ. Montpellier 2, Montpellier, France
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Firstpage
    1173
  • Lastpage
    1177
  • Abstract
    CdS thin films were grown on different substrates (glass, GaAs, Si, Al2O3) by CBD. The rms roughness of the CdS layers, measured on AFM pictures, ranges from 11 to 95 nm depending on the chemical nature of the substrate Thermal annealing of the samples leads to an improvement of the CdS crystalline quality with a conversion from cubic to hexagonal phase, whatever substrate is used, as assessed by XRD. Thermal annealing also improves the optical properties. While as-grown CdS layers photoluminescence is due to defect related emission around 1.7eV, annealed samples show dominant near band edge photoluminescence emission around 2.4 e V.
  • Keywords
    II-VI semiconductors; X-ray diffraction; annealing; atomic force microscopy; cadmium compounds; liquid phase deposition; photoluminescence; semiconductor growth; semiconductor thin films; surface roughness; wide band gap semiconductors; AFM; Al2O3; CdS; GaAs; Si; SiO2; XRD; chemical bath deposition; chemical nature; crystalline quality; cubic phase; defect related emission; glass substrates; hexagonal phase; near band edge photoluminescence emission; optical properties; rms roughness; thermal annealing; thin films; Annealing; Chemicals; Photoluminescence; Photovoltaic cells; Silicon; Substrates; Surface morphology; Annealing; cadmium compounds; photovoltaic cells; substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.2013.6744349
  • Filename
    6744349