DocumentCode :
3343822
Title :
Annealing effect of CdS thin films deposited by chemical bath deposition on different substrates
Author :
Robin, Yoann ; Moret, Matthieu ; Ruffenach, S. ; Aulombard, Roger-Louis ; Briot, O.
Author_Institution :
Lab. Charles Coulomb, Univ. Montpellier 2, Montpellier, France
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
1173
Lastpage :
1177
Abstract :
CdS thin films were grown on different substrates (glass, GaAs, Si, Al2O3) by CBD. The rms roughness of the CdS layers, measured on AFM pictures, ranges from 11 to 95 nm depending on the chemical nature of the substrate Thermal annealing of the samples leads to an improvement of the CdS crystalline quality with a conversion from cubic to hexagonal phase, whatever substrate is used, as assessed by XRD. Thermal annealing also improves the optical properties. While as-grown CdS layers photoluminescence is due to defect related emission around 1.7eV, annealed samples show dominant near band edge photoluminescence emission around 2.4 e V.
Keywords :
II-VI semiconductors; X-ray diffraction; annealing; atomic force microscopy; cadmium compounds; liquid phase deposition; photoluminescence; semiconductor growth; semiconductor thin films; surface roughness; wide band gap semiconductors; AFM; Al2O3; CdS; GaAs; Si; SiO2; XRD; chemical bath deposition; chemical nature; crystalline quality; cubic phase; defect related emission; glass substrates; hexagonal phase; near band edge photoluminescence emission; optical properties; rms roughness; thermal annealing; thin films; Annealing; Chemicals; Photoluminescence; Photovoltaic cells; Silicon; Substrates; Surface morphology; Annealing; cadmium compounds; photovoltaic cells; substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744349
Filename :
6744349
Link To Document :
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