DocumentCode
3343822
Title
Annealing effect of CdS thin films deposited by chemical bath deposition on different substrates
Author
Robin, Yoann ; Moret, Matthieu ; Ruffenach, S. ; Aulombard, Roger-Louis ; Briot, O.
Author_Institution
Lab. Charles Coulomb, Univ. Montpellier 2, Montpellier, France
fYear
2013
fDate
16-21 June 2013
Firstpage
1173
Lastpage
1177
Abstract
CdS thin films were grown on different substrates (glass, GaAs, Si, Al2O3) by CBD. The rms roughness of the CdS layers, measured on AFM pictures, ranges from 11 to 95 nm depending on the chemical nature of the substrate Thermal annealing of the samples leads to an improvement of the CdS crystalline quality with a conversion from cubic to hexagonal phase, whatever substrate is used, as assessed by XRD. Thermal annealing also improves the optical properties. While as-grown CdS layers photoluminescence is due to defect related emission around 1.7eV, annealed samples show dominant near band edge photoluminescence emission around 2.4 e V.
Keywords
II-VI semiconductors; X-ray diffraction; annealing; atomic force microscopy; cadmium compounds; liquid phase deposition; photoluminescence; semiconductor growth; semiconductor thin films; surface roughness; wide band gap semiconductors; AFM; Al2O3; CdS; GaAs; Si; SiO2; XRD; chemical bath deposition; chemical nature; crystalline quality; cubic phase; defect related emission; glass substrates; hexagonal phase; near band edge photoluminescence emission; optical properties; rms roughness; thermal annealing; thin films; Annealing; Chemicals; Photoluminescence; Photovoltaic cells; Silicon; Substrates; Surface morphology; Annealing; cadmium compounds; photovoltaic cells; substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/PVSC.2013.6744349
Filename
6744349
Link To Document