• DocumentCode
    3343952
  • Title

    Importance of air ambient during CdCl2 treatment of thin film CdTe solar cells studied through temperature dependent admittance spectroscopy

  • Author

    Nollet, Peter ; Burgelman, Marc ; Degrave, Stefaan ; Beier, Jutta

  • Author_Institution
    ELIS, Ghent Univ., Belgium
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    704
  • Lastpage
    707
  • Abstract
    CdCl2 treatment is a crucial step in the production of high efficiency CdTe solar cells. Thin-film CdS/CdTe solar cells have been prepared by ANTEC GmbH (Germany) both in vacuum and in air ambient. We compared these series of samples using the admittance spectroscopy (AS) technique. The presence of air increases remarkably the shallow acceptor concentration in the CdTe, confirming earlier studies. A broad band of deep defects is still found in all samples (independent of the activation). We also illustrate how the presence of a Schottky back contact to the CdTe solar cells introduces a capacitance step in the AS measurements, enabling the determination of the barrier height.
  • Keywords
    II-VI semiconductors; Schottky barriers; cadmium compounds; capacitance; deep levels; electric admittance; etching; impurity states; semiconductor thin films; solar cells; CdCl2; CdCl2 treatment; CdS-CdTe; Schottky back contact; air ambient; barrier height determination; capacitance step; deep defects; etching; shallow acceptor concentration; temperature dependent admittance spectroscopy; thin-film CdS/CdTe solar cells; Admittance measurement; Capacitance measurement; Doping; Frequency; Gold; Photovoltaic cells; Spectroscopy; Temperature dependence; Temperature measurement; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190662
  • Filename
    1190662