DocumentCode
3343952
Title
Importance of air ambient during CdCl2 treatment of thin film CdTe solar cells studied through temperature dependent admittance spectroscopy
Author
Nollet, Peter ; Burgelman, Marc ; Degrave, Stefaan ; Beier, Jutta
Author_Institution
ELIS, Ghent Univ., Belgium
fYear
2002
fDate
19-24 May 2002
Firstpage
704
Lastpage
707
Abstract
CdCl2 treatment is a crucial step in the production of high efficiency CdTe solar cells. Thin-film CdS/CdTe solar cells have been prepared by ANTEC GmbH (Germany) both in vacuum and in air ambient. We compared these series of samples using the admittance spectroscopy (AS) technique. The presence of air increases remarkably the shallow acceptor concentration in the CdTe, confirming earlier studies. A broad band of deep defects is still found in all samples (independent of the activation). We also illustrate how the presence of a Schottky back contact to the CdTe solar cells introduces a capacitance step in the AS measurements, enabling the determination of the barrier height.
Keywords
II-VI semiconductors; Schottky barriers; cadmium compounds; capacitance; deep levels; electric admittance; etching; impurity states; semiconductor thin films; solar cells; CdCl2; CdCl2 treatment; CdS-CdTe; Schottky back contact; air ambient; barrier height determination; capacitance step; deep defects; etching; shallow acceptor concentration; temperature dependent admittance spectroscopy; thin-film CdS/CdTe solar cells; Admittance measurement; Capacitance measurement; Doping; Frequency; Gold; Photovoltaic cells; Spectroscopy; Temperature dependence; Temperature measurement; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN
1060-8371
Print_ISBN
0-7803-7471-1
Type
conf
DOI
10.1109/PVSC.2002.1190662
Filename
1190662
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