Chemical treatment of semiconductor surfaces - one of the main problem of modern semiconductor material sciences

It is shown that the construction of concentration dependences of equal etching rates, surface roughness, degree of surface contamination with etchant components and reaction products, deviation from stoichiometry of the surface layers (so-called Gibbs diagrams in the case of the ternary systems) for different semiconductor compounds and based on its solid solutions give the possibility to determine the etckant composition with necessary properties. The comparison of obtained Gibbs diagrams for undoped and doped semiconductors as well as for solid solutions with difforent compositions allow to define the influence of doping or solid solution composition on the main peculiarities of the chemical treatment. Taking into account a big experience in the field of the chemical treatment oj the 1/- VI and III- V semiconductor compounds some problems which must be resolve in the future are lay down.