Title :
Native acceptors in GaSb: thermal ionization energy and hole scattering on space charge regions
Abstract :
The thermal ionization energy of native acceptors in p-type GaSb single crystals and its dependence on acceptor centre concentration and on the compensation degree has been compared with the available theoretical models. The temperature dependence of the hole mobility in the range from 300 K to 77 K was , found to be dominated by scattering on space charge regions.
Keywords :
Data analysis; Erbium; III-V semiconductor materials; Ionization; Materials science and technology; Optical scattering; Physics; Space charge; Temperature dependence; Temperature distribution;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location :
Smolenice Castle, Slovakia
Print_ISBN :
0-7803-8335-7
DOI :
10.1109/ASDAM.2004.1441155
