DocumentCode :
3344013
Title :
Ion implanted metal wrap through silicon solar cells
Author :
Bateman, Nicholas ; Tonini, D. ; Galiazzo, Marco ; Cellere, Giorgio
Author_Institution :
Appl. Mater., Varian Semicond. Equip., Gloucester, MA, USA
fYear :
2013
fDate :
16-21 June 2013
Firstpage :
1203
Lastpage :
1206
Abstract :
Ion implanted emitters show reduced recombination leading to solar cells with better light collection and voltage[1]. Metal wrap through solar cells reduce shading losses and allow improved series resistance [2]. As such, the two technologies should be complementary. We present results for the first ion implanted metal wrap through cells built at Applied Materials. The cells show the expected improvement in current over baseline cells, and match the baseline voltage. Our MWT cells are limited by poor fill factor due to high series resistance. We see no difference in cell efficiency between process flows for which the hole drilling is done before texturing and before metallization, and no difference in via shunting. Our results show promise for the combination of ion implantation with MWT technology.
Keywords :
drilling; elemental semiconductors; ion implantation; metallisation; passivation; silicon; solar cells; Ion implanted metal wrap; MWT cell processing; cell efficiency; fill factor; hole drilling; ion implanted emitters; light collection; series resistance; shading losses; silicon solar cells; Ion implantation; Metallization; Photovoltaic cells; Resistance; Silicon; Standards; crystalline silicon photovoltaics; ion implantation; metal wrap through solar cells; passivation and advanced device; solar cell processing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/PVSC.2013.6744356
Filename :
6744356
Link To Document :
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