Preparation and properties of GaInP/sub 2/GaAs heterostructures

Growth ofihe Ga_xIn_1-xP/GaAs(J00) heterostructuresfrom the liquid phase wru optimized at 800°C to obtain thick epitaxial layers. Experimental conditions for growth of the mirror like, morphological defects free structures are very narrow. Capping of the ternary layer by GaAs grown from the Bi or Bi-Ga melt was investigated as well. New model of the substrate planarity related defects hru been suggested Sharp boundary between ordered and disord.ereddislocatiolls network in the top Bi:GaAs layer was observed and lattice misfit has been compensated by In addition to produce Bi:Ga_xIn_1-xAs, (x>O.95J- Ga_0.51In_0.49P layers were doped by Te and Mg for n- and p-type layers respectively. Photoluminescence(PL) maxima of the unintentionally doped layers at low temperatures corresponding to the bound exciton (BE) recombination atl.98JeV. The FWHM of the BE line is 7meV.