Title :
Sensitivity of surface passivation and interface quality in IBC-SHJ solar cells to patterning process
Author :
Das, Udhab ; Jianbo He ; Zhan Shu ; Lulu Zhang ; Thompson, Charlotte ; Birkmire, Robert ; Hegedus, Steven
Author_Institution :
Inst. of Energy Conversion, Univ. of Delaware, Newark, DE, USA
Abstract :
The effect of the back surface patterning process on solar cell performance is evaluated for an interdigitated back contact silicon heterojunction (IBC-SHJ) structure. Three different patterning processes, two step photolithography, two step photolithography with laser fired base contact, and one step photolithography are investigated, allowing independent evaluation of the interfaces between the intrinsic amorphous silicon (i.a-Si:H) layer that passivates the c-Si and p- and n-a-Si:H layers. The fill factor of the IBC-SHJ solar cell critically depends on the quality of i/p a-Si:H interface, while the open circuit voltage is governed by the surface passivation quality of the entire back surface.
Keywords :
amorphous semiconductors; elemental semiconductors; laser materials processing; passivation; photolithography; silicon compounds; solar cells; IBC-SHJ solar cells; back surface patterning process; interdigitated back contact silicon heterojunction structure; intrinsic amorphous silicon layer; laser fired base contact; open circuit voltage; photolithography; surface interface quality sensitivity; surface passivation quality sensitivity; Dry etching; Lithography; Passivation; Photovoltaic cells; Silicon; Strips; interdigitated back contact; interfaces; patterning process; silicon heterojunction solar cell; surface passivation;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744360
