DocumentCode
3344157
Title
Low frequency noise characterization of the GaN LEDs
Author
Bychikhin, S. ; Vandamme, L.K.J. ; Kuzmik, J. ; Meneghesso, G. ; Pogany, D.
fYear
2004
fDate
17-21 Oct. 2004
Firstpage
85
Lastpage
86
Abstract
The aging of the GaN LEDs was investigated by low frequency noise characterization at different biasing conditions. Two components of the i/fnoise, which are related to the junction and contact noise sources, were observed. It was found that the contact noise source in the thermally aged LEDs exhibits higher fluctuations than in the virgin devices. This difference in noise characteristics could be used as reliability indicator of the GaN LEDs.
Keywords
Aging; Consumer electronics; Contacts; Fluctuations; Gallium nitride; Light emitting diodes; Low-frequency noise; Solid state circuits; Synthetic aperture sonar; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location
Smolenice Castle, Slovakia
Print_ISBN
0-7803-8335-7
Type
conf
DOI
10.1109/ASDAM.2004.1441163
Filename
1441163
Link To Document