• DocumentCode
    3344163
  • Title

    Correlation between lifetime curve and performance of amorphous silicon/ crystalline silicon heterostructure solar cell

  • Author

    Ghosh, Koushik ; Herasimenka, Stanislau ; Dauksher, Bill ; Bowden, Stuart

  • Author_Institution
    Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Firstpage
    1232
  • Lastpage
    1237
  • Abstract
    Detailed balance calculations are prevalently used to calculate the thermodynamic limit of performance of photovoltaic devices. This work combines the detailed balance calculations with the lifetime curve to determine the limiting performance of silicon heterostructure solar cell. The detailed balance model uses the state-of-the-art values for the recombination coefficients. The calculation shows that for an undoped silicon with only intrinsic (radiative and auger) recombination mechanisms considered, the efficiency limit is 29.63 % at 26 μm. However, the value changes with the inclusion of the extrinsic recombination processes that occurs due to the presence of surfaces and defects within crystalline silicon.
  • Keywords
    amorphous semiconductors; elemental semiconductors; silicon; solar cells; Si; amorphous silicon; crystalline silicon heterostructure solar cell; lifetime curve; photovoltaic devices; recombination coefficients; Absorption; Charge carrier processes; Limiting; Performance evaluation; Photovoltaic cells; Silicon; Spontaneous emission; a-Si/c-Si heterostructure; detailed balance; efficiency limit; lifetime measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.2013.6744363
  • Filename
    6744363