DocumentCode :
3344224
Title :
Low temperature metal-semiconductor interaction in Al/n-GaAs and Al/n-AlGaAs junctions
Author :
Horváth, Zs J. ; Elsawirki, A.I.A. ; Varga, Sz. ; Csontos, L. ; Karányi, J. ; Somogyi, K.
fYear :
2004
fDate :
Oct. 17-21, 2004
Firstpage :
95
Lastpage :
98
Keywords :
Artificial intelligence; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Degradation; Epitaxial growth; Epitaxial layers; Gallium arsenide; Ohmic contacts; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Print_ISBN :
0-7803-8335-7
Type :
conf
DOI :
10.1109/ASDAM.2004.1441167
Filename :
1441167
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3344224
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