Interface properties of CIGS(s)/buffer layers formed by the Cd-partial electrolyte process

Author

Johnson, P.K. ; Pudov, A.O. ; Sites, J.R. ; Ramanathan, K. ; Hasoon, F.S. ; Tarrant, D.E.

Author_Institution

Dept. of Phys., Colorado State Univ., Fort Collins, CO, USA

fYear

2002

fDate

19-24 May 2002

Firstpage

764

Lastpage

767

Abstract

A chemical-bath treatment that does not form a CdS layer has been used on CIGS absorbers made at the National Renewable Energy Laboratory (NREL). The resultant cells have moderate to high efficiency, with improved current collection at shorter wavelengths. Room temperature quantum efficiency (QE) and capacitance-voltage (CV) results indicate that the different surface treatments yield electro-optical differences in the bulk of the absorber. Room temperature current density-voltage (JV) and AMPS modeling results are used to compare and contrast the results of the surface treatments, primarily from the NREL devices.

Keywords

cadmium compounds; capacitance; current density; gallium compounds; indium compounds; solar cells; surface treatment; ternary semiconductors; AMPS modeling; CIGS absorbers; CIGSS buffer layers; Cd-partial electrolyte process; Cu(InGa)Se₂; CuIn_xGa_1-xSe_yS_2-y; NREL; National Renewable Energy Laboratory; capacitance-voltage results; chemical-bath treatment; current collection; current density-voltage; electro-optical differences; interface properties; moderate to high efficiency; room temperature quantum efficiency; shorter wavelengths; surface treatments; Buffer layers; Capacitance measurement; Capacitance-voltage characteristics; Chemical industry; Frequency measurement; Laboratories; Renewable energy resources; Surface treatment; Temperature; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190677

Filename

1190677