• DocumentCode
    3344287
  • Title

    Experimental study of the plateau-to-plateau transitions in the integer quantum hall effect in InGaAs/InP heterostructures

  • Author

    Podor, B. ; Kovacs, Gy. ; Remenyi, C.

  • fYear
    2004
  • fDate
    17-21 Oct. 2004
  • Firstpage
    107
  • Lastpage
    110
  • Abstract
    We report on temperature scaling experiments on the plateau-to-plateau transitions in the integer quantum Hall effect in InO.53Ga0.47AS/lnP heterostructures. The scaling exponent for the transitions between the quantum Hall plateaus was found to have a value of K ~ 0.6-0.8. The obtained values are interpreted in terms of the relevant inelastic electron scattering mechanisms.
  • Keywords
    Conductivity; Electrons; Hall effect; Indium gallium arsenide; Indium phosphide; Magnetic fields; Materials science and technology; Particle scattering; Physics; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
  • Conference_Location
    Smolenice Castle, Slovakia
  • Print_ISBN
    0-7803-8335-7
  • Type

    conf

  • DOI
    10.1109/ASDAM.2004.1441170
  • Filename
    1441170
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3344287