DocumentCode
3344316
Title
Investigations of MOVPE growth of zinc delta doped GaAs
Author
Sciana, B. ; Radziewicz, D. ; Pucicki, D. ; Tlaczala, M. ; Sek, G.
fYear
2004
fDate
17-21 Oct. 2004
Firstpage
111
Lastpage
114
Abstract
This work presents the study of MOVPE growth of Zn-5-doped GaAs epilayers. A basic 5-doping procedure "purge-doping-purge" was applied The influence of the growth temperature, zinc concentration in gas phase and c5-doping lime on the density and spatial distribution oj holes was investigated The electrical and optical properties of the test structures were examined using Bio-Rad EC-V PN 4300 electrochemical capacitance-voltage profiler and photoreflectance spectroscopy PR
Keywords
Biomedical optical imaging; Capacitance-voltage characteristics; Epitaxial growth; Epitaxial layers; Gallium arsenide; Optical buffering; Semiconductor device doping; Spectroscopy; Testing; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location
Smolenice Castle, Slovakia
Print_ISBN
0-7803-8335-7
Type
conf
DOI
10.1109/ASDAM.2004.1441171
Filename
1441171
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