Title :
Investigations of MOVPE growth of zinc delta doped GaAs
Author :
Sciana, B. ; Radziewicz, D. ; Pucicki, D. ; Tlaczala, M. ; Sek, G.
Abstract :
This work presents the study of MOVPE growth of Zn-5-doped GaAs epilayers. A basic 5-doping procedure "purge-doping-purge" was applied The influence of the growth temperature, zinc concentration in gas phase and c5-doping lime on the density and spatial distribution oj holes was investigated The electrical and optical properties of the test structures were examined using Bio-Rad EC-V PN 4300 electrochemical capacitance-voltage profiler and photoreflectance spectroscopy PR
Keywords :
Biomedical optical imaging; Capacitance-voltage characteristics; Epitaxial growth; Epitaxial layers; Gallium arsenide; Optical buffering; Semiconductor device doping; Spectroscopy; Testing; Zinc;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location :
Smolenice Castle, Slovakia
Print_ISBN :
0-7803-8335-7
DOI :
10.1109/ASDAM.2004.1441171
