Enhanced CdTe solar cell performance through surface engineering

Author

Kim, Donghwan ; Heo, Jangeun ; Lee, Rowoon ; Han, Younggun ; Durose, Ken ; Petrov, Sergel ; Nakamura, Kyotaro ; Toyama, Toshihiko ; Okamoto, Hiroaki

Author_Institution

Div. of Mater. Sci. & Eng., Korea Univ., Seoul, South Korea

fYear

2002

fDate

19-24 May 2002

Firstpage

772

Lastpage

775

Abstract

Surface of indium-tin oxide (ITO) substrate were irradiated with accelerated Ar⁺, N₂⁺, O₂⁺ and H₂⁺ ions (1 keV) at different doses. The change in sheet resistance (R_sh), the water-contact angle (WCA) and the composition of ITO were measured. R_sh slightly increased with the ion dose. WCA dropped to less than 15° and the composition shifted to oxygen-rich. CdS films grown on ITO by chemical bath deposition showed an improvement in terms of the microstructure, the surface morphology, the optical transmittance, and the stoichiometry. X-ray photoluminescence was performed on CdS/ITO glass for the first time. The performance of CdTe/CdS solar cells was improved as a result of ITO surface treatments, this being due to improvements in the physical structure of the CdS interfaces.

Keywords

II-VI semiconductors; cadmium compounds; contact angle; electrical resistivity; indium compounds; ion-surface impact; liquid phase deposited coatings; photoluminescence; semiconductor device measurement; solar cells; stoichiometry; surface morphology; tin compounds; 1 keV; CdS; CdTe; CdTe/CdS solar cells; ITO; ITO substrate; InSnO; chemical bath deposition; enhanced CdTe solar cell performance; ion irradiation; microstructure; optical transmittance; photoluminescence; sheet resistance; stoichiometry; surface engineering; surface morphology; water-contact angle; Acceleration; Argon; Chemicals; Electrical resistance measurement; Indium tin oxide; Optical films; Photovoltaic cells; Surface engineering; Surface morphology; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190683

Filename

1190683