DocumentCode
3344361
Title
A microstructural analysis of thin film TiNiSn
Author
Compton, Dn ; Leitch, Awr ; Neethling, Jh ; Kozyrkov, VV
Author_Institution
Dept. of Phys., Port Elizabeth Univ., South Africa
fYear
1996
fDate
26-29 March 1996
Firstpage
491
Lastpage
493
Abstract
This paper reports on a structural investigation of the ternary compound TiNiSn, prepared as a thin film by electron beam deposition of a sandwich structure comprising individual layers of Ti, Ni and Sn. The effect of annealing the compound at 800/spl deg/C for times up to 72 hours was investigated. X-ray diffraction revealed the formation of TiNi/sub 2/Sn after 6 hours of annealing. The excess of Ni in the deposited structure (confirmed by EDS) resulted in the first phase of TiNiSn not being present and a shift in the lattice parameter of second phase TiNi/sub 2/Sn.
Keywords
X-ray diffraction; annealing; crystal microstructure; electron beam deposition; metallic thin films; nickel alloys; thermoelectric power; tin alloys; titanium alloys; 6 h; 72 h; 800 C; TiNi/sub 2/Sn; TiNiSn; X-ray diffraction; annealing; electron beam deposition; lattice parameter; microstructural analysis; thin film TiNiSn; Annealing; Intermetallic; Nickel; Scanning electron microscopy; Sputtering; Substrates; Temperature; Thermoelectricity; Tin; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1996., Fifteenth International Conference on
Conference_Location
Pasadena, CA, USA
Print_ISBN
0-7803-3221-0
Type
conf
DOI
10.1109/ICT.1996.553533
Filename
553533
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