Title :
Relaxation mechanisms in self-assembled quantum dots studied by near-field spectroscopy
Author :
Toda, Yuichiro ; Shinomori, S. ; Moriwaki, Osamu ; Arakawa, Yasuhiko
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
Summary form only given. The study of carrier relaxation in self-assembled quantum dots (SAQDs) is important for understanding the device physics of zero-dimensional (0D) systems. In previous reports on SAQDs, the photoluminescence (PL) excitation (PLE) resonances do not reflect the higher excited slates observed in PL. This phenomenon has been explained by the multiphonon filtering of excited states. However these discussions are based on the ensemble measurements and more detailed analysis is still needed to determine the real relaxation processes in SAQDs. We have investigated dominant relaxation mechanism in SAQDs by single dot spectroscopy.
Keywords :
excited states; gallium arsenide; indium compounds; photoluminescence; relaxation; self-assembly; semiconductor quantum dots; GaAs; InGaAs; PL excitation; SAQDs; carrier relaxation; device physics; dominant relaxation mechanism; ensemble measurements; excited states; higher excited slates; multiphonon filtering; near-field spectroscopy; photoluminescence excitation; relaxation mechanisms; relaxation processes; self-assembled quantum dots; single dot spectroscopy; zero-dimensional systems; Assembly; Laser beams; Laser excitation; Nonlinear optics; Optical diffraction; Optical feedback; Optimized production technology; Quantum dots; Spectroscopy; US Department of Transportation;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
DOI :
10.1109/QELS.1999.807151
