Title :
Advancements in GaInP2/GaAs/Ge solar cells - production status, qualification results and operational benefits
Author :
Granata, Jennifer E. ; Ermer, James H. ; Hebert, Peter ; Haddad, Moran ; King, Richard R. ; Krut, Dmitri D. ; Gillanders, Mark S. ; Karam, Nasser H. ; Cavicchi, B. Terence
Author_Institution :
Spectrolab Inc., Sylmar, CA, USA
Abstract :
In 2001 Spectrolab completed design and qualification, and began production on the third-generation multijunction solar cell - the improved triple-junction GaInP2/GaAs/Ge. With over 21% AMO conversion efficiency at an operating temperature of 60°C at end-of-life, this cell has 16% more power than competing dual-junction designs in GEO orbit after 15 years (7×1014 1-MeV electron equivalence). Spectrolab is currently qualifying the fourth-generation triple-junction solar cell capable of delivering over 22% AMO conversion efficiency under these same conditions, with a beginning-of-life operating efficiency of 28%.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; semiconductor device measurement; solar cells; space vehicles; 15 year; 21 percent; 22 percent; 28 percent; 60 degC; AMO conversion efficiency; GaInP2-GaAs-Ge; GaInP2/GaAs/Ge solar cells; fourth-generation triple-junction solar cell; third-generation multijunction solar cell; triple-junction GaInP2/GaAs/Ge; Buildings; Electrons; Gallium arsenide; Manufacturing; Photovoltaic cells; Production; Qualifications; Space technology; Temperature; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190703
