DocumentCode :
3344586
Title :
Thermal stability of ruthenium MOS gate electrodes
Author :
Tapajna, M. ; Cico, K. ; Luptak, R. ; Husekova, K. ; Frohlich, K. ; Harmmatha, L. ; Hooker, J.C. ; Roozeboom, F.
fYear :
2004
fDate :
17-21 Oct. 2004
Firstpage :
167
Lastpage :
170
Abstract :
In this paper, thermal stability o/metal-organics vapour deposited (MOCVD) Ru gate electrodes grown on atomic-layer deposited (ALD) Hf02 dielectric films have been analysed. As-deposited MOS capacitors were annealed in forming gas (10% H2 + 90% N2) at temperature range 430 - 590 °C for 30 min. MOS capacitors were analysed by high-frequency capacitance-voltage (G-V), conductance-voltage (G-V) and current voltage (I-V) measurements resulting density of oxide charge, Neff, density of interface states, Dii and leakage current density, Jleak respectively.
Keywords :
Annealing; CMOS technology; Capacitance; Capacitance-voltage characteristics; Electrodes; MOCVD; MOS capacitors; MOSFET circuits; Temperature; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location :
Smolenice Castle, Slovakia
Print_ISBN :
0-7803-8335-7
Type :
conf
DOI :
10.1109/ASDAM.2004.1441185
Filename :
1441185
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3344586
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