Temperature dependent spectral response measurements for III-V multi-junction solar cells

Author

Aiken, Daniel ; Stan, Mark ; Murray, Chris ; Sharps, Paul ; Hills, Jenifer ; Clevenger, Brad

Author_Institution

Emcore Photovoltaics, Albuquerque, NM, USA

fYear

2002

fDate

19-24 May 2002

Firstpage

828

Lastpage

831

Abstract

Temperature coefficients for the integrated current of all three subcells in a production InGaP/InGaAs/Ge solar cell structure have been measured at temperatures ranging from 5°C to 100°C. The InGaP, InGaAs, and germanium temperature coefficients are 0.011, 0.009, and 0.044 mA/cm²/°C, respectively. This data can be used to design multi-junction solar cells for optimum performance at any specified operating temperature in this range. The predicted current mismatch for a similar triple junction operating at 100°C but designed to be current matched at 28°C is approximately 3%.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; semiconductor device measurement; solar cells; 5 to 100 degC; III-V multi-junction solar cells; InGaP-InGaAs-Ge; InGaP/InGaAs/Ge solar cell structure; current mismatch; integrated current; multi-junction solar cells; temperature coefficients; temperature dependent spectral response measurements; Extraterrestrial measurements; III-V semiconductor materials; Integrated circuit measurements; Photovoltaic cells; Signal resolution; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190704

Filename

1190704