Title :
Copper versus aluminum contacts for silicon devices
Author :
Kolesnikov, D. ; Vobecky, J.
Abstract :
Aluminum (AI, PtSi????????AI, PtSi-TiW-AICuSi) and copper (TiW-Ni-Cu, PtSi-TiW-NiCu) based contact stacks for high-power devices are compared using the measured forward I-V curves of P-i-N diodes. PtSi layer on silicon surface is found necessary to obtain low overall contact resistance and voltage drop of the device in the ON-state. The diodes with top layer from copper show lower overall contact resistance and better mechanical stability compared to that of aluminum
Keywords :
Aluminum; Anodes; Artificial intelligence; Cathodes; Contact resistance; Copper; P-i-n diodes; Semiconductor diodes; Silicon devices; Voltage;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location :
Smolenice Castle, Slovakia
Print_ISBN :
0-7803-8335-7
DOI :
10.1109/ASDAM.2004.1441187
