Title :
Radiation tolerance investigation of XAMPS detectors
Author :
Carini, G.A. ; Kuczewski, A.J. ; Siddons, D.P.
Author_Institution :
SLAC Nat. Accel. Lab., Menlo Park, CA, USA
Abstract :
Tolerance of XAMPS detectors to x-ray photons was investigated at the National Synchrotron Light Source. Two experiments were carried out: first JFETs with the same characteristics of the in pixel transistor were irradiated; then the radiation hardness of a 64×64-pixel detector was investigated. An increase of leakage current was observed and significantly reduced after a very low temperature forming gas annealing. These results confirm that this detector is suitable for application at IV generation light sources.
Keywords :
annealing; leakage currents; semiconductor counters; tolerance analysis; JFET; National Synchrotron Light Source; X-ray photons; XAMPS detectors; leakage current; radiation hardness; radiation tolerance; very low temperature forming gas annealing; Annealing; Area measurement; JFETs; Out of order; Photonics; Scattering; Switches;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
Conference_Location :
Valencia
Print_ISBN :
978-1-4673-0118-3
DOI :
10.1109/NSSMIC.2011.6153903
