Title :
Photoclectrical properties of heterojunction based on transparent semiconducting oxide - semiconductor for photonics application
Author :
Domaradzki, I. ; Kaczmarek, D.
Abstract :
In the present work the photoelectrical properties ofheterojunction based on thin film of semiconducting metal oxide composed of titanium dioxide doped with vanadium andpalladium deposited on well conductive silicon substrate have been outlined The properties were examined by means of the J- V characteristics upon light illumination and the DBle method.
Keywords :
Conductivity; Heterojunctions; Manufacturing; Optical films; Photonics; Pulsed power supplies; Semiconductivity; Semiconductor thin films; Silicon; Sputtering;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location :
Smolenice Castle, Slovakia
Print_ISBN :
0-7803-8335-7
DOI :
10.1109/ASDAM.2004.1441193
