DocumentCode :
3344739
Title :
Enhanced Electroabsorption In Strained-layer InxGa1-xAs-InP Quantum Wells Via Absorption Edge Merging
Author :
Gomatam, Badri N. ; Anderson, Neal G.
Author_Institution :
The University of Massachusetts
fYear :
1990
fDate :
4-9 Nov 1990
Firstpage :
301
Lastpage :
303
Keywords :
Absorption; Capacitive sensors; Energy states; Function approximation; Indium phosphide; Merging; Optical coupling; Optical modulation; Quantum mechanics; Transmission line matrix methods;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1990. LEOS '90. Conference Proceedings., IEEE
Print_ISBN :
0-87942-550-4
Type :
conf
DOI :
10.1109/LEOS.1990.690584
Filename :
690584
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3344739
بازگشت