Optical properties of edge emitting semiconductor laser diodes with facet coated bragg mirror

In this paper the effect of high-reflectivity dielectric SiD/a-Si Bragg mirrors deposited on multiple-quantum-well (MQW) semiconductor laser diode edges on their optical properties is presented. The optical power and emission spectra were measured in pulse regime for different injection currents and temperature. The L-1 characteristics were measured using integrated sphere and calibrated optical power meter. The lasers with rare Bragg mirrors demonstrated a reduction in threshold c´urrent. The influence of a front facet covered laser structures by SiOx layer with varying thickness were further investigated to achieve maximum output optical power. The experimental work was focused on measurement of the L-I characteristics, near field pattern and corresponding spectral characteristics. This work points on the differencesi n the optical properties of uncoated and rare Bragg mirror coated lasers as well as front facet coated with oxide layer.