Title :
High-frequency electron transport in a model ballistic MOSFET
Abstract :
Simple one-dimensional MOSFET model with de bias and small microwave signal applied to the gate is investigated The high1requency transmission amplitudes are calculated as function of electron energy and the high-frequency current density is found.
Keywords :
Electronic mail; Electrons; Frequency; MOSFET circuits; Microelectronics; Microwave transistors; Particle scattering; Steady-state; Voltage; Wave functions;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location :
Smolenice Castle, Slovakia
Print_ISBN :
0-7803-8335-7
DOI :
10.1109/ASDAM.2004.1441200
