A study of tunnel recombination junction on a-Si:H/HIT tandem structure solar cell

Author

Youngseok Lee ; Dao Vinh Ai ; Sangho Kim ; Sangmyung Han ; Heeseok Kim ; Junsin Yi

Author_Institution

Dept. of Energy Sci., Sungkyunkwan Univ., Suwon, South Korea

fYear

2013

fDate

16-21 June 2013

Firstpage

1361

Lastpage

1363

Abstract

Novel tandem solar cell structure a-Si:H/HIT has been developed. The fabrication of hetero structure tandem cell (HSTC) has been combined an hydrogenated amorphous silicon (a-Si:H) p-i-n thin film solarp cell for a top cell and a heterojunction with an intrinsic thin layer (HIT) type silicon solar cell for a bottom cell. Using the novel tandem structure, an open circuit voltage of 1.43 V has been obtained. A tunnel recombination junction (TRJ) quality of an amorphous silicon based tandem solar cell can have a significant impact on its performance. Therefore, it is important to understand the TRJ characteristics.

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; semiconductor heterojunctions; semiconductor thin films; silicon; solar cells; thin film devices; tunnelling; HIT type silicon solar cell; HSTC; Si:H; TRJ characteristics; amorphous silicon based tandem solar cell; heterostructure tandem cell fabrication; hydrogenated amorphous silicon p-i-n thin film solarp cell; intrinsic thin layer; tandem structure solar cell; tunnel recombination junction; voltage 1.43 V; Amorphous silicon; Current measurement; Doping; Junctions; Photovoltaic cells; Radiative recombination; Amorphous silicon; HIT; hetero-junction; tandem cell; thin film; tunnel recombination junction (TRJ);

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/PVSC.2013.6744396

Filename

6744396