Title :
Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD´98 (IEEE Cat. No.98CH36212)
Abstract :
The following topics were dealt with. SOI devices; IGBTs; MOSFETs; smart power devices; SiC devices; thyristors; semiconductor diodes; and power ICs
Keywords :
insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power integrated circuits; power semiconductor diodes; silicon-on-insulator; thyristors; IGBTs; MOSFETs; SOI devices; SiC devices; power ICs; semiconductor diodes; smart power devices; thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702535
