DocumentCode :
3345136
Title :
Criteria for the design of GaInP/GaAs/Ge triple-junction cells to optimize their performance outdoors
Author :
McMahon, W.E. ; Kurtz, Sarah ; Emery, K. ; Young, M.S.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
931
Lastpage :
934
Abstract :
This paper investigates which reference spectrum should be used to design GalnP/GaAs/Ge triple-junction cells (at 300 K) in order to optimize their performance outdoors (at elevated temperatures). The outdoor performance is simulated using direct spectra from the recently proposed Module Energy Rating Procedure. We find that triple-junction cells designed for AM1.5D, low-AOD and AM1.5G standard spectra at 300 K all work well for maximizing daily energy production at elevated temperatures. AM1.5G cells are the best choice for midday power production, whereas AM1.5D cells are the best choice for power production during the morning and evening. Performance of cells optimized for a newly proposed Low-AOD spectrum is intermediate between these two extremes.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; solar cells; 300 K; AM1.5D; AM1.5G standard spectra; GaInP-GaAs-Ge; GaInP/GaAs/Ge triple-junction cells; Module Energy Rating Procedure; low-AOD; outdoor performance; Design optimization; Gallium arsenide; Laboratories; Lighting; Performance evaluation; Photovoltaic cells; Production; Renewable energy resources; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190733
Filename :
1190733
Link To Document :
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