• DocumentCode
    3345136
  • Title

    Criteria for the design of GaInP/GaAs/Ge triple-junction cells to optimize their performance outdoors

  • Author

    McMahon, W.E. ; Kurtz, Sarah ; Emery, K. ; Young, M.S.

  • Author_Institution
    Nat. Renewable Energy Lab., Golden, CO, USA
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    931
  • Lastpage
    934
  • Abstract
    This paper investigates which reference spectrum should be used to design GalnP/GaAs/Ge triple-junction cells (at 300 K) in order to optimize their performance outdoors (at elevated temperatures). The outdoor performance is simulated using direct spectra from the recently proposed Module Energy Rating Procedure. We find that triple-junction cells designed for AM1.5D, low-AOD and AM1.5G standard spectra at 300 K all work well for maximizing daily energy production at elevated temperatures. AM1.5G cells are the best choice for midday power production, whereas AM1.5D cells are the best choice for power production during the morning and evening. Performance of cells optimized for a newly proposed Low-AOD spectrum is intermediate between these two extremes.
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; solar cells; 300 K; AM1.5D; AM1.5G standard spectra; GaInP-GaAs-Ge; GaInP/GaAs/Ge triple-junction cells; Module Energy Rating Procedure; low-AOD; outdoor performance; Design optimization; Gallium arsenide; Laboratories; Lighting; Performance evaluation; Photovoltaic cells; Production; Renewable energy resources; Temperature; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190733
  • Filename
    1190733