Title :
CdTe films by Elemental Vapor Transport
Author :
Kendre, V. ; Evani, V. ; Khan, Mahrukh ; Palekis, V. ; Vatavu, S. ; Morel, D. ; Ferekides, C.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Abstract :
The electro-optical properties of CdTe films deposited by Elemental Vapor Transport (EVT) are being investigated. The EVT process, unlike most processes currently used for the deposition of CdTe thin films, allows for the creation of excess Cd or excess Te conditions during the deposition, which can be used to influence the formation of defects and improve doping in CdTe. Using resistivity measurements, it has been demonstrated that the Cd/Te ratio used during the deposition process influences the incorporation of Cu in CdTe. Photoluminescence measurements have shown that the Cd/Te ratio also influences the formation of defect complexes in CdTe. Junctions formed with CdS suggest that the conductivity of CdTe can be adjusted p- or n-type by creating Te or Cd-rich conditions respectively. Structurally, the EVT-CdTe films have been found to be densely packed and highly oriented.
Keywords :
II-VI semiconductors; cadmium compounds; crystal defects; electrical conductivity; electrical resistivity; electro-optical effects; photoluminescence; semiconductor doping; semiconductor growth; semiconductor thin films; wide band gap semiconductors; CdTe; CdTe thin film deposition; EVT process; defect formation; doping; electrical conductivity; electro-optical properties; elemental vapor transport; n-type materials; p-type materials; photoluminescence measurements; resistivity measurements; structural property; Conductivity; Doping; Films; Junctions; Photovoltaic cells; Substrates; Temperature measurement; CdTe; doping; lifetime; photovoltaic cells;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th
Conference_Location :
Tampa, FL
DOI :
10.1109/PVSC.2013.6744411
