DocumentCode :
3345208
Title :
NiO modified thin films for gas monitoring
Author :
Hotovy, I. ; Huran, Jozef ; Spiess, L. ; Gubisch, M. ; Schawohl, J.
Author_Institution :
Department of Microelectronics, Slovak University of Technology, Ikovicova 3, 812 19 Bratislava (Slovakia)
fYear :
2004
fDate :
17-21 Oct. 2004
Firstpage :
303
Lastpage :
306
Abstract :
In our contribution, we present the results concerning the Pt surface modification of nickel oxide thin films deposited by dc reactive magnetron sputtering. Pt very thin overlayers with a thickness of about 3 and 5 nm have been sputtered on the top of NiO samples. The surface structure and morphology of the samples have been analysed by XRD and by scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. The electrical responses of the NiO-based sensors towards different H2 concentration (500-5000 ppm) have been also considered. The Pt modified NiO samples showed an enhancement of the response towards H2 as compared to the unmodified NiO sample. The thickness of the Pt thin layers seems also an important parameter in determining the properties of the NiO films as H2 sensors.
Keywords :
Atomic force microscopy; Chemicals; Monitoring; Nickel; Optical films; Scanning electron microscopy; Sputtering; Surface morphology; Transistors; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Conference_Location :
Smolenice Castle, Slovakia
Print_ISBN :
0-7803-8335-7
Type :
conf
DOI :
10.1109/ASDAM.2004.1441221
Filename :
1441221
Link To Document :
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