Title :
Modeling and numerical analysis of temperature variations along the cavity and in the heat sink of a single quantum well high power laser diode
Author :
Gity, F. ; Moghaddasi, M.N. ; Ansari, L.
Author_Institution :
Dept of Electr. Eng., Islamic Azad Univ. - Sci. & Res. Branch, Tehran
Abstract :
In this paper, thermal behavior of GaAs/AlGaAs single quantum well (SQW) high power laser diode (HPLD) is modeled by means of finite difference method (FDM). A numerical model is introduced that calculates the time dependant axial variations of photon density, carrier density and temperature in the semiconductor laser, self-consistently. The dynamic response of the high power laserpsilas back facet temperature and the influence of the surface recombination velocity on the temperature of both facets are modeled numerically. The two-dimensional temperature distribution in the Cupper heat sink is also demonstrated. In order to gain precise results we use the Fermipsilas Golden Rule to calculate the exact temperature-dependent gain function of the quantum well laser.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; finite difference methods; gallium arsenide; heat sinks; laser cavity resonators; quantum well lasers; surface recombination; GaAs-AlGaAs; carrier density; cavity; finite difference method; heat sink; high power laser diode; photon density; semiconductor laser; single quantum well; surface recombination velocity; temperature variations; thermal behavior; Diode lasers; Finite difference methods; Gallium arsenide; Heat sinks; Laser modes; Numerical analysis; Numerical models; Quantum well lasers; Semiconductor lasers; Temperature; finite difference method; heat sink; high power quantum well laser; surface recombination velocity;
Conference_Titel :
Laser and Fiber-Optical Networks Modeling, 2008. LFNM 2008. 9th International Conference on
Conference_Location :
Crimea
Print_ISBN :
978-1-4244-2526-6
Electronic_ISBN :
978-1-4244-2527-3
DOI :
10.1109/LFNM.2008.4670360
