DocumentCode
3345353
Title
Effect of proton irradiation and subsequent thermal annealing on the characteristics of thin-film silicon solar cells and microcrystalline silicon layers
Author
Kuendig, J. ; Shah, A.
Author_Institution
Inst. of Microtechnology (IMT), Neuchatel Univ., Switzerland
fYear
2002
fDate
19-24 May 2002
Firstpage
974
Lastpage
977
Abstract
In an earlier paper, the authors had reported on the results of a proton irradiation campaign on a series of thin-film silicon solar cells (single- and double-junction). There, a low-temperature annealing was discovered for the microcrystalline silicon solar cells. The present paper links these earlier results with recent investigations on newly irradiated individual microcrystalline layers: the effect of proton irradiation and subsequent thermal annealing steps on the optical and electronic properties of these microcrystalline silicon layers is investigated in detail and is shown to correlate well with the results reported earlier for full cells.
Keywords
annealing; elemental semiconductors; proton effects; semiconductor thin films; silicon; solar cells; Si; electronic properties; microcrystalline silicon layer; optical properties; proton irradiation; thermal annealing; thin-film silicon solar cell; Amorphous materials; Annealing; Photovoltaic cells; Protons; Semiconductor thin films; Silicon; Substrates; Temperature; Thermal degradation; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN
1060-8371
Print_ISBN
0-7803-7471-1
Type
conf
DOI
10.1109/PVSC.2002.1190763
Filename
1190763
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