• DocumentCode
    3345353
  • Title

    Effect of proton irradiation and subsequent thermal annealing on the characteristics of thin-film silicon solar cells and microcrystalline silicon layers

  • Author

    Kuendig, J. ; Shah, A.

  • Author_Institution
    Inst. of Microtechnology (IMT), Neuchatel Univ., Switzerland
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    974
  • Lastpage
    977
  • Abstract
    In an earlier paper, the authors had reported on the results of a proton irradiation campaign on a series of thin-film silicon solar cells (single- and double-junction). There, a low-temperature annealing was discovered for the microcrystalline silicon solar cells. The present paper links these earlier results with recent investigations on newly irradiated individual microcrystalline layers: the effect of proton irradiation and subsequent thermal annealing steps on the optical and electronic properties of these microcrystalline silicon layers is investigated in detail and is shown to correlate well with the results reported earlier for full cells.
  • Keywords
    annealing; elemental semiconductors; proton effects; semiconductor thin films; silicon; solar cells; Si; electronic properties; microcrystalline silicon layer; optical properties; proton irradiation; thermal annealing; thin-film silicon solar cell; Amorphous materials; Annealing; Photovoltaic cells; Protons; Semiconductor thin films; Silicon; Substrates; Temperature; Thermal degradation; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
  • ISSN
    1060-8371
  • Print_ISBN
    0-7803-7471-1
  • Type

    conf

  • DOI
    10.1109/PVSC.2002.1190763
  • Filename
    1190763