Title :
Distinct Lasing Operation From Chirped InAs/InP Quantum-Dash Laser
Author :
Khan, M.Z.M. ; Ng, Tien Khee ; Chi-Sen Lee ; Anjum, Dalaver H. ; Cha, D. ; Bhattacharya, Pallab ; Ooi, Boon S.
Author_Institution :
Electr. & Math. Sci. & Eng. Div., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
Abstract :
We study the enhanced inhomogeneity across the InAs quantum-dash (Qdash) layers by incorporating a chirped AlGaInAs barrier thickness in the InAs/InP laser structure. The lasing operation is investigated via Fabry-Pérot ridge-waveguide laser characterization, which shows a peculiar behavior under quasi-continuous-wave (QCW) operation. Continuous energy transfer between different dash ensembles initiated quenching of lasing action among certain dash groups, causing a reduced intensity gap in the lasing spectra. We discuss these characteristics in terms of the quasi-zero-dimensional density of states (DOS) of dashes and the active region inhomogeneity.
Keywords :
III-V semiconductors; aluminium compounds; chirp modulation; gallium compounds; indium compounds; optical waveguides; quantum dash lasers; radiation quenching; ridge waveguides; DOS; Fabry-Perot ridge waveguide; InAs-InP laser structure; InAs-InP-AlGaInAs; QCW operation; Qdash layers; chirped AlGaInAs barrier thickness; chirped InAs-InP quantum dash laser; distinct lasing operation; enhanced inhomogeneity; laser characterization; quasicontinuous-wave operation; quasizero-dimensional density of states; quenching; Cavity resonators; Chirp; Nonhomogeneous media; Photonics; Quantum cascade lasers; Quantum dot lasers; Semiconductor lasers; inhomogeneous broadening; quantum dash lasers; self-assembled quantum dot; semiconductor quantum dots;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2013.2272781
