Improvement of reliability characteristics using the N2 implantation in SOHOS flash memory

Author

Park, Jeong-Gyu ; Oh, Jae-Sub ; Yang, Seung-Dong ; Jeong, Kwang-Seok ; Kim, Yu-Mi ; Yun, Ho-Jin ; Lee, Hi-Deok ; Lee, Ga-Won

Author_Institution

Electron. Eng. Dept., Chung-nam Nat. Univ., Daejeon, South Korea

fYear

2010

fDate

12-15 Oct. 2010

Firstpage

364

Lastpage

367

Abstract

In this paper, device performance and reliability characteristics are investigated and discussed in Fin-type SONOS and SOHOS flash memory device. We also proposed the N₂ implantation method for improvement of reliability characteristics in SOHOS flash memory device. It shows that data retention characteristic in N₂ implantation SOHOS device is improved due to the nitrogen induced-deep traps, while its P/E speed is degraded by additional nitrogen in high-k trapping layer.

Keywords

flash memories; high-k dielectric thin films; ion implantation; nickel compounds; nitrogen; semiconductor device reliability; silicon compounds; N₂; N₂ implantation method; SOHOS flash memory devices; SiO-NiO-Si; data retention characteristic; fin-type SONOS flash memory device; high-k trapping layer; nitrogen induced-deep traps; reliability characteristics; Charge carrier processes; FinFETs; Flash memory; High K dielectric materials; Implants; Reliability; SONOS devices; N2 implantation; SOHOS; retention;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE

Conference_Location

Monterey, CA

Print_ISBN

978-1-4244-8896-4

Type

conf

DOI

10.1109/NMDC.2010.5652151

Filename

5652151