Comparison of a-Si/a-SiGe tandem cell performance using silane or disilane for deposition of the amorphous silicon germanium intrinsic layer

Author

Ganguly, G. ; Carlson, D.E. ; Arya, R.R.

Author_Institution

North American Technol. Center, BP Solar, Toano, VA, USA

fYear

2002

fDate

19-24 May 2002

Firstpage

1114

Lastpage

1117

Abstract

We have investigated the effects of using hydrogen-diluted mixtures of either silane and germane or disilane and germane for deposition of amorphous silicon germanium intrinsic layers in a-Si/a-SiGe tandem devices with all the other layers were unchanged. The ´optimized´ DC plasma induced deposition conditions have been found using screening, followed by response surface design of experiments. Multiple deposition runs of initial performance and its light induced degradation have been compared.

Keywords

Ge-Si alloys; amorphous semiconductors; elemental semiconductors; plasma CVD coatings; semiconductor device measurement; semiconductor materials; semiconductor thin films; silicon; solar cells; GeH₄; Si-SiGe; SiH₄; a-Si/a-SiGe tandem cell performance; amorphous silicon germanium intrinsic layer; disilane; germane; optimized deposition conditions; screening; silane; Amorphous silicon; Costs; Current measurement; Degradation; Electrons; Germanium silicon alloys; Hydrogen; Plasma displays; Silicon germanium; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190801

Filename

1190801