DocumentCode :
3345880
Title :
Enhanced light-trapping for micromorph tandem solar cells by LP-CVD ZnO
Author :
Meier, J. ; Spitznagel, J. ; Fay, S. ; Bucher, C. ; Graf, U. ; Kroll, U. ; Dubail, S. ; Shah, A.
Author_Institution :
Inst. de Microtechnique, Neuchatel, Switzerland
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
1118
Lastpage :
1121
Abstract :
Amorphous silicon p-i-n single-junction and "micromorph" (amorphous/microcrystalline) tandem solar cells have been deposited on "inhouse" LP-CVD zinc oxide front-TCO. ZnO shows superior light-trapping behavior compared to SnO2 (Asahi type U). Up-scaling to modules by laser scribing has been developed, both for amorphous single-junction and for micromorph tandem cells on LP-CVD ZnO. Within our laboratory-size reactor an amorphous mini-module (22 cm2) with an aperture efficiency of 8.4% after 200 h of light-soaking could be fabricated. In case of micromorph tandem modules (24 cm2) a stabilized aperture area efficiency of 9.8% (initial 11%) has been achieved. Modified micromorph tandem cells with an intermediate reflector between the a-Si:H top and the pc-Si:H bottom cell show almost stable behavior with respect to light-soaking.
Keywords :
CVD coatings; II-VI semiconductors; amorphous semiconductors; elemental semiconductors; hydrogen; semiconductor device measurement; silicon; solar cells; zinc compounds; 200 h; 8.4 percent; 9.8 percent; LP-CVD ZnO; Si:H; ZnO; amorphous silicon p-i-n single-junction; efficiency; enhanced light-trapping; laser scribing; micromorph tandem solar cells; Amorphous materials; Amorphous silicon; Apertures; Conducting materials; Conductivity; Inductors; Laboratories; PIN photodiodes; Photovoltaic cells; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190802
Filename :
1190802
Link To Document :
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